s ot - 23 plastic - encapsulate transistors ss8550 transistor ( pnp ) features ? high collector current ? complementary to ss805 0 m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage - 40 v v ceo collector - emitter voltage - 25 v v ebo emitter - base voltage - 5 v i c collector current - 1.5 a p c collector power dissipation 300 m w r ja thermal resistance from j u nction to a mbient 417 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltag e v (br) cbo i c = - 1 0 0 a , i e =0 - 40 v collector - emitter breakdown voltage v (br) c e o i c = - 0. 1 m a , i b =0 - 2 5 v emitter - base breakdown voltage v (br)eb o i e = - 1 0 0 a , i c =0 - 5 v collector cut - off current i cbo v cb = - 40 v, i e =0 - 1 00 n a collector cut - off current i c e o v c e = - 20 v, i b =0 - 100 n a emitter cut - off current i eb o v eb = - 5 v, i c =0 - 100 n a h fe (1) v ce = - 1 v, i c = - 100m a 120 400 dc current gain h fe (2) v ce = - 1 v, i c = - 800m a 40 collector - emitter saturation voltage v ce(sat) i c = - 800m a, i b = - 80 ma - 0.5 v base - emitter saturation voltage v b e(sat) i c = - 800m a, i b = - 80 ma - 1.2 v base - emitter voltage v b e v ce = - 1 v, i c = - 10m a - 1 v transition frequency f t v ce = - 10 v,i c = - 5 0 ma , f= 30 mhz 100 mhz collector output capacitance c ob v cb = - 10 v, i e =0, f=1mhz 20 pf clas sification of h fe(1) rank l h j range 120 C 200 200 C 350 300 C 400 marking y2 so t C 23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -1 -10 -100 -1000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -0.1 -1 -10 -100 -1000 -200 -300 -400 -500 -600 -700 -800 -900 -1000 -0.1 -1 -10 -100 -1000 10 100 -1 -10 1 -1 -10 -100 -1000 -1 -10 -100 -1000 -1 -10 -100 10 100 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 vce=-1v ta=25 ta=100 o c i c v be ?? base-emmiter voltage v be (mv) collcetor current i c (ma) 1ma 0.9ma 0.8ma 0.7ma 0.6ma 0.5ma 0.4ma 0.3ma 0.2ma i b =0.1ma static characteristic collector current i c (ma) collector-emitter voltage v ce (v) =10 ta=25 ta=100 base-emitter saturation voltage v besat (mv) collector current i c (ma) i c v besat ?? ta=100 ta=25 500 v ce =-1v dc current gain h fe collector current i c (ma) i c h fe ?? c ob c ib 100 -0.2 f=1mhz i e =0/ i c =0 ta=25 o c v cb / v eb c ob / c ib ?? capacitance c (pf) 20 reverse voltage v (v) ta=25 0.2 ta=100 =10 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? transition frequency ft (mhz) collector current i c (ma) vce-10v ta=25 o c i c ft ?? 500 ss8550 pc ?? ta collector power dissipation pc (mw) ambient temperature ta ( ) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,apr,2011
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